TSDF2005W vishay semiconductors 1 (4) www.vishay.com document number 85085 rev. 3, 02may02 25 ghz silicon npn planar rf transistor electrostatic sensitive device. observe precautions for handling. applications for low current, lownoise applications, such as in rf frontends, in analogue and digital cellular and cordless phones,in analogue and digital tv systems (e.g. satellite tuners), in high frequency oscillators up to 12 ghz, in pagers and radar detectors. features very low noise figure very high power gain high transition frequency f t = 25 ghz low feedback capacitance emitter pins are thermal leads 12 43 16712 TSDF2005W marking: yh2 plastic case (sot 343r) 1 = emitter, 2 = base, 3 = emitter, 4 = collector absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit collector-base voltage v cbo 10 v collector-emitter voltage v ceo 3.5 v emitter-base voltage v ebo 1.5 v collector current i c 12 ma total power dissipation t amb 132 c p tot 40 mw junction temperature t j 150 c storage temperature range t stg 65 to +150 c junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m m cu r thja 450 k/w
TSDF2005W vishay semiconductors www.vishay.com 2 (4) rev. 3, 02may02 document number 85085 electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min. typ. max. unit collector cut-off current v ce = 5 v, v be = 0 i ces 100 m a collector-base cut-off current v cb = 5 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 m a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 3.5 v collector-emitter saturation voltage i c = 5 ma, i b = 0.5 ma v cesat 0.1 0.25 v dc forward current transfer ratio v ce = 2 v, i c = 20 ma h fe 50 100 150 electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min. typ. max. unit transition frequency v ce = 2 v, i c = 10 ma, f = 1 ghz f t 25 ghz collector-base capacitance v cb = 2 v, f = 1 mhz c cb 0.05 0.08 pf collector-emitter capacitance v ce = 2 v, f = 1 mhz c ce 0.3 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 0.3 pf noise figure v ce = 2 v, i c = 2 ma, z s = z sopt , z l = z lopt , f = 2 ghz f 1.2 db power gain, maximum stable gain v ce = 2 v, i c = 5 ma, z s = z sopt , z l = z lopt , f = 2 ghz g pe = g ms *) 21 db transducer gain v ce = 2 v, i c = 5 ma, z s = z l = 50 w , f = 2 ghz | s 21e | 2 14 17 db third order intercept point at output v ce = 2 v, i c = 10 ma, z s = z l = 50 w , f = 2 ghz ip 3 15 dbm 1 db compression point v ce = 2 v, i c = 10 ma, z s = z l = 50 w , f = 2 ghz p 1db 5 dbm *) g ms = | s 21e /s 12e |
TSDF2005W vishay semiconductors 3 (4) www.vishay.com document number 85085 rev. 3, 02may02 dimensions of TSDF2005W in mm 96 12238
TSDF2005W vishay semiconductors www.vishay.com 4 (4) rev. 3, 02may02 document number 85085 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substanc es. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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